Recombination and Shake-up in Doped Quantum Wells
نویسنده
چکیده
-Polarization mixing observed in the luminescence spectra from n-doped quantum wells is explained by the manyelectron processes involved in light emission.
منابع مشابه
Strong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity
This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.
متن کاملSpectral and temporal resolution of recombination from multiple excitation states in modulation-doped AlGaN/GaN multiple quantum well heterostructures
Time-resolved photoluminescence measurements of carrier lifetimes in modulation-doped s100 Åd AlxGa1−xN/ s100 Åd GaN multiple quantum well heterostructures are reported. The photoluminescence sPLd spectrum exhibits several lines associated with recombination of carriers from multiple excited electron states to the hole ground state. The PL decay times associated with ground state recombination,...
متن کاملDesign of a new asymmetric waveguide in InP-Based multi-quantum well laser
Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016